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| to learn more about on semiconductor, please visit our website at www.onsemi.com please note: as part of the fairchild semiconductor integration, some of the fairchild orderable part numbers will need to change in order to meet on semiconductors system requirements. since the on semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the fairchild part numbers will be changed to a dash (-). this document may contain device numbers with an underscore (_). please check the on semiconductor website to verify the updated device numbers. the most current and up-to-date ordering information can be found at www.onsemi.com . please email any questions regarding the system integration to fairchild_questions@onsemi.com . is now part of on semiconductor and the on semiconductor logo are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries in the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of on semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does on semiconductor assume any liability arising out of the application or use of any product or circuit, and specifcally disclaims any and all liability, including without limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. typical parameters which may be provided in on semiconductor data sheets and/or specifcations can and do vary in different applications and actual performance may vary over time. all operating parameters, including typicals must be validated for each customer application by customers technical experts. on semiconductor does not convey any license under its patent rights nor the rights of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classifcation in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its offcers, employees, subsidiaries, affliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affrmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner.
fsb50450b / fsb5 0450bs motion spm ? 5 series semiconductor components industries, llc, 2017 www.fairchildsemi.com fsb50450b / fsb50450bs . rev. 1.2 www.onsemi.com 1 february 2017 fsb50450b / fsb50450bs motion spm ? 5 series features ? ul certified no. e209204 (ul1557) ? optimized for over 10 khz switching frequency ? 500 v frfet mosfet 3-phase inverter with gate drivers and protection ? built-in bootstrap diodes simplify pcb layout ? separate open-source pins from low-side mosfets for three-phase current-sensing ? active-high interface, wo rks with 3.3 / 5 v logic, schmitt-trigger input ? optimized for low electromagnetic interference ? hvic temperature-sensing built-in for temperature monitoring ? hvic for gate driving and under-voltage protection ? isolation rating: 1500 v rms / min. ? rohs complia ? moisture sensitive level (msl) 3 for smd pkg applications ? 3-phase inverter driver for small power ac motor drives related source ? rd-fsb50450as - reference design for motion spm 5 series ver.2 ? an-9082 - motion spm5 series thermal performance by contact pressure general description the fsb50450b / fsb50450bs is an advanced motion spm ? 5 module providing a fully-featured, high- performance inverter out put stage for ac induction, bldc and pmsm motors. these modules integrate optimized gate drive of the built-in mosfets (frfet ? technology) to minimize emi and losses, while also providing multiple on-mo dule protection features including under-voltage lock outs and thermal monitoring. the built-in high-speed hvic requires only a single supply voltage and translat es the incoming logic-level gate inputs to the high-voltage, high-current drive signals required to properly drive the module's internal mosfets. separate open-source mosfet terminals are available for each phase to support the widest variety of control algorithms. figure 1. 3d package drawing (click to activate 3d content) package marking & ordering information < fsb50450b > fsb50450b / fsb5 0450bs motion spm ? 5 series semiconductor components industries, llc, 2017 www.fairchildsemi.com fsb50450b / fsb50450bs . rev. 1.2 www.onsemi.com 2 absolute maximum ratings inverter part (each mosfet unless otherwise specified.) control part (each hvic unless otherwise specified.) bootstrap diode part (each bootstrap diode unless otherwise specified.) thermal resistance total system notes: 1. for the measurement point of case temperature t c , please refer to figure 4. 2. marking ? * ? is calculation value or design factor. symbol parameter conditions rating unit v dss drain-source voltage of each mosfet 500 v *i d 25 each mosfet drain current, continuous t c = 25c 2.2 a *i d 80 each mosfet drain current, continuous t c = 80c 1.4 a *i dp each mosfet drain current, peak t c = 25c, pw < 100 s5.0a *i drms each mosfet drain current, rms t c = 80c, f pwm < 20 khz 1.0 a rms symbol parameter conditions rating unit v dd control supply voltage applied between v dd and com 20 v v bs high-side bias voltage applied between v b and v s 20 v v in input signal voltage applied between v in and com -0.3 ~ v dd + 0.3 v symbol parameter conditions rating unit v rrmb maximum repetitive reverse voltage 500 v * i fb forward current t c = 25c 0.5 a * i fpb forward current (peak) t c = 25c, under 1ms pulse width 2.0 a symbol parameter conditions rating unit r th(j-c)q junction to case thermal resistance ( note1 ) inverter mosfet part, (per module) 2.3 c/w symbol parameter conditions rating unit t j operating junction temperature -40 ~ 150 c t stg storage temperature -40 ~ 125 c v iso isolation voltage 60 hz, sinusoidal, 1 minute, con- nect pins to heat sink plate 1500 v rms fsb50450b / fsb5 0450bs motion spm ? 5 series semiconductor components industries, llc, 2017 www.fairchildsemi.com fsb50450b / fsb50450bs . rev. 1.2 www.onsemi.com 3 pin descriptions figure 2. pin configuration and in ternal block diag ram (bottom view) notes: 3. source terminal of each low-side mosfet is not connected to supply ground or bias voltage ground inside motion spm ? 5 product. external connections should be made as indicated in figure 3. pin number pin name pin description 1 com ic common supply ground 2v b(u) bias voltage for u-phase high-side mosfet driving 3v dd(u) bias voltage for u-phase ic and low-side mosfet driving 4in (uh) signal input for u-phase high-side 5in (ul) signal input for u-phase low-side 6 n.c no connection 7v b(v) bias voltage for v-phase high side mosfet driving 8v dd(v) bias voltage for v-phase ic and low side mosfet driving 9in (vh) signal input for v-phase high-side 10 in (vl) signal input for v-phase low-side 11 v ts output for hvic temperature sensing 12 v b(w) bias voltage for w-phase high-side mosfet driving 13 v dd(w) bias voltage for w-phase ic and low-side mosfet driving 14 in (wh) signal input for w-phase high-side 15 in (wl) signal input for w-phase low-side 16 n.c no connection 17 p positive dc-link input 18 u, v s(u) output for u-phase & bias voltage ground for high-side mosfet driving 19 n u negative dc-link input for u-phase 20 n v negative dc-link input for v-phase 21 v, v s(v) output for v-phase & bias voltage ground for high-side mosfet driving 22 n w negative dc-link input for w-phase 23 w, v s(w) output for w phase & bias voltage ground for high-side mosfet driving (1) com (2) v b(u) (3) v dd(u) (4) in (uh) (5) in (ul) (6) n.c (7) v b(v) (8) v dd(v) (9) in (vh) (10) in (vl) (11) v ts (12) v b(w) (13) v dd(w) (14) in (wh) (15) in (wl) (16) (17) p (18) u, v s(u) (19) n u (20) n v (21) v, v s(v) (22) n w (23) w, v s(w) com vdd lin hin vb ho vs lo com vdd lin hin vb ho vs lo v ts com vdd lin hin vb ho vs lo n.c fsb50450b / fsb5 0450bs motion spm ? 5 series semiconductor components industries, llc, 2017 www.fairchildsemi.com fsb50450b / fsb50450bs . rev. 1.2 www.onsemi.com 4 electrical characteristics (t j = 25c, v dd = v bs = 15 v unless otherwise specified.) inverter part (each mosfet unless otherwise specified.) control part (each hvic unless otherwise specified.) bootstrap diode part (each bootstrap diode unless otherwise specified.) symbol parameter conditions min typ max unit bv dss drain - source breakdown voltage v in = 0 v, i d = 1 ma ( note 4) 500 - - v i dss zero gate voltage drain current v in = 0 v, v ds = 500 v - - 1 ma r ds(on) static drain - source turn-on resistance v dd = v bs = 15 v, v in = 5 v, i d = 1.0 a - 4.3 5.3 v sd drain - source diode forward voltage v dd = v bs = 15v, v in = 0 v, i d = -1.0 a - - 1.3 v t on switching times v pn = 300 v, v dd = v bs = 15 v, i d = 1.0 a v in = 0 v ? 5 v, inductive load l = 3 mh high- and low-side mosfet switching ( note 5) - 450 - ns t off - 500 - ns t rr -70- ns e on -25- j e off -5- j rbsoa reverse bias safe oper- ating area v pn = 400 v, v dd = v bs = 15 v, i d = i dp , v ds = bv dss , t j = 150c high- and low-side mosfet switching ( note 6) full square symbol parameter conditions min typ max unit i qdd quiescent v dd current v dd = 15 v, v in = 0 v applied between v dd and com - - 200 a i qbs quiescent v bs current v bs = 15 v, v in = 0 v applied between v b(u) - u, v b(v) - v, v b(w) - w - - 100 a i pdd operating v dd supply current v dd - com v dd = 15 v, f pwm = 20 khz, duty = 50%, applied to one pwm sig- nal input for low-side -- 900 a i pbs operating v bs supply current v b(u) - v s(u) , v b(v) - v s(v) , v b(w) - v s(w) v dd = v bs = 15 v, f pwm = 20 khz, duty = 50%, applied to one pwm signal input for high-side -- 800 a uv ddd low-side under-voltage protection (figure 8) v dd under-voltage protection detection level 7.4 8.0 9.4 v uv ddr v dd under-voltage protection reset level 8.0 8.9 9.8 v uv bsd high-side under-voltage protection (figure 9) v bs under-voltage protection detection level 7.4 8.0 9.4 v uv bsr v bs under-voltage protection reset level 8.0 8.9 9.8 v v ts hvic temperature sens- ing voltage output v dd = 15 v, t hvic = 25c ( note 7) 600 790 980 mv v ih on threshold voltage logic high level applied between v in and com --2.9v v il off threshold voltage logic low level 0.8 - - v symbol parameter conditions min typ max unit v fb forward voltage i f = 0.1 a, t c = 25c ( note 8) - 2.5 - v t rrb reverse recovery time i f = 0.1 a, t c = 25c - 80 - ns fsb50450b / fsb5 0450bs motion spm ? 5 series semiconductor components industries, llc, 2017 www.fairchildsemi.com fsb50450b / fsb50450bs . rev. 1.2 www.onsemi.com 5 recommended operating condition figure 3. built-in bootstrap diode characteristics (typical) notes: 4. bv dss is the absolute maximum voltage rating between drain and source terminal of each mosfet inside motion spm ? 5 product. v pn should be sufficiently less than this value considering the effect of the stray inductance so that v pn should not exceed bv dss in any case. 5. t on and t off include the propagation delay of the internal drive ic. listed values are measured at the laboratory test condition, and they can be different according to the field applications due to the effect of different printed circuit boards and wirings. please see figure 6 for the switching time defi nition with the switching test circuit of figure 7. 6. the peak current and voltage of each mosfet during the switching operation should be included in the safe operating area (so a). please see figure 7 for the rbsoa test circuit that is same as the switching test circuit. 7. v ts is only for sensing-temperature of module and cannot shutdown mosfets automatically. 8. built-in bootstrap diode includes around 15 resistance characteristic. please refer to figure 2. symbol parameter conditions min. typ. max. unit v pn supply voltage applied between p and n - 300 400 v v dd control supply voltage applied between v dd and com 13.5 15.0 16.5 v v bs high-side bias voltage applied between v b and v s 13.5 15.0 16.5 v v in(on) input on threshold voltage applied between v in and com 3.0 - v dd v v in(off) input off threshold voltage 0 - 0.6 v t dead blanking time for preventing arm-short v dd = v bs = 13.5 ~ 16.5 v, t j 150c 1.0 - - s f pwm pwm switching frequency t j 150c - 15 - khz 0123456789101112131415 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 built-in bootstrap diode v f -i f characteristic i f [a] v f [v] t c = 25c fsb50450b / fsb5 0450bs motion spm ? 5 series semiconductor components industries, llc, 2017 www.fairchildsemi.com fsb50450b / fsb50450bs . rev. 1.2 www.onsemi.com 6 figure 4. recommended mcu interface and bootstrap circuit with parameters notes: 9. parameters for bootstrap circuit elements are dependent on pwm algorithm. for 15 khz of switching frequency, typical example of parameters is shown above. 10. rc-coupling (r 5 and c 5 ) and c 4 at each input of motion spm 5 product and mcu (indicated as dotted lines) may be used to prevent improper signal due to surge- noise. 11. bold lines should be short and thick in pcb pattern to have small stray inductance of circui t, which results in the reductio n of surge-voltage. bypass capacitors such as c 1 , c 2 and c 3 should have good high-frequency characteristics to absorb high-frequency ripple-current. figure 5. case temperature measurement notes: 12. attach the thermocouple on top of the heat-sink of spm 5 package (between spm 5 package and heatsink if applied) to get the correct temperature measurement. figure 6. temperature profile of v ts (typical) hin lin output note 0 0 z both frfet off 0 1 0 low side frfet on 10 v dc high side frfet on 1 1 forbidden shoot through open open z same as (0,0) com vdd lin hin vb ho vs lo p n r 3 inverter output c 3 c 1 mcu +15 v 10 f these values depend on pwm control algorithm * example of bootstrap paramters : c 1 = c 2 = 1 f ceramic capacitor r 5 c 5 v dc c 2 v ts * example circuit : v phase c 4 v one leg diagram of motion spm ? 5 product 20 40 60 80 100 120 140 160 0.5 1.0 1.5 2.0 2.5 3.0 3.5 v ts [v] t hvic [ o c] fsb50450b / fsb5 0450bs motion spm ? 5 series semiconductor components industries, llc, 2017 www.fairchildsemi.com fsb50450b / fsb50450bs . rev. 1.2 www.onsemi.com 7 figure 7. switching time definitions figure 8. switching and rbsoa (single-pulse) test circuit (low-side) figure 9. under-voltage protection (low-side) figure 10. under-voltage protection (high-side) t on t rr i rr 100% of i d 120% of i d (a) turn-on t off (b) turn-off i d v ds v ds i d v in v in 10% of i d com vdd lin hin vb ho vs lo i d v dd c bs lv dc + v ds - v ts one leg diagram of motion spm ? 5 product uv ddd uv ddr input signal uv protection status low- side supply, v dd mosfet current reset set reset uv bsd uv bsr input signal uv protection status high- side supply, v bs mosfet c urrent reset set reset fsb50450b / fsb5 0450bs motion spm ? 5 series semiconductor components industries, llc, 2017 www.fairchildsemi.com fsb50450b / fsb50450bs . rev. 1.2 www.onsemi.com 8 figure 11. example of application circuit notes: 13. about pin position, refer to figure 1. 14. rc-coupling (r 5 and c 5 , r 4 and c 6 ) and c 4 at each input of motion spm ? 5 product and mcu are useful to prevent improper input signal caused by surge-noise. 15. the voltage-drop across r 3 affects the low-side switching performance and the bootstrap characteristics since it is placed between com and the source ter minal of the low- side mosfet. for this reason, the voltage-drop across r 3 should be less than 1 v in the steady-state. 16. ground-wires and output terminals, should be thick and short in order to avoid surge-voltage and malfunction of hvic. 17. all the filter capacitors should be connected close to motion spm 5 product, and they should have good characteristics for rejecting high-frequency ripple current. com vdd lin hin vb ho vs lo com vdd lin hin vb ho vs lo com vdd lin hin vb ho vs lo (1 ) com (2 ) v b(u) (3 ) v dd(u) (4 ) in (uh) (5 ) in (ul) (6 ) n.c (7 ) v b(v) (8 ) v dd(v) (9 ) in (vh) (10) in (vl) (11) v ts (12) v b(w) (13) v dd(w) (14) in (wh) (15) in (wl) (16) n.c (17) p (18) u, v s(u) (19) n u (22) n w micom c 1 15 v supply c 3 v dc c 2 r 3 r 4 c 6 r 5 c 5 for current-sensing and protection v ts (21) v, v s(v) (20) n v (23) w, v s(w) c 4 m fsb50450b / fsb5 0450bs motion spm ? 5 series semiconductor components industries, llc, 2017 www.fairchildsemi.com fsb50450b / fsb50450bs . rev. 1.2 www.onsemi.com 9 detailed package outline drawings ( fsb50450b ) notes: unless otherwise specified a) this package does not comply to any current packaging standard b) all dimensions are in millimeters c) dimensions are exclusive of burrs, mold flash, and tie bar extrusions d) ( ) is reference e) [ ] is ass'y quality f) drawing filename: mod23dcrev4.0 g) fairchild semi conductor 116 17 23 14. 00 14 .55 ?0. 3 0 2 ? ~ 6 ? (1 .00) (1 .80) (1 .165 ) (1.165) ( 0.2 0) 13x 0.50 ?0 .1 0 16x max 1.00 2.95 ?0 . 50 (0. 30) 0.6 0 ?0 . 10 5x ma x 1.00 (0.17) (1.375) (2.275) 15x 1.77 8=2 6.67 ?0. 30 ( r 0 . 4 0 ) 29.00 ?0 .2 0 13 .34 ?0.30 13 .34 ?0.30 12.23 ?0 .3 0 13.1 3 ?0 .3 0 0 . 6 0 0 . 4 5 3.9 0 ?0 . 30 2x 1.95 ?0.30 2.4 8 ?0 .3 0 3.90 ?0.30 4x 0.50 ?0 .1 0 2x pin1 9,20 12.00 ?0 .2 0 17 23 19 3. 15?0 .20 (6 .05) fsb50450b / fsb5 0450bs motion spm ? 5 series semiconductor components industries, llc, 2017 www.fairchildsemi.com fsb50450b / fsb50450bs . rev. 1.2 www.onsemi.com 10 detailed package outline drawings ( fsb50450bs ) notes: unless otherwise specified a) this package does not comply to any current packaging standard b) all dimensions are in millimeters c) di mensi ons are exc lusi ve of burr s, mold flash, and tie bar extrusions d) ( ) i s ref erenc e e) drawing filename: mod23dgrev6.0 f) fai rch ild semi con du ctor 116 17 23 (1 .165 ) (1.165) ma x 1.00 max 1.00 (2.275) (1.375) (1.00) (1.80) land pattern recommendations (1 .30) 1.3 2.80 7.5 5 7.5 5 0.88 9 1.778 15x 116 17 23 3.90 2x 2. 475 1.95 3.90 4x 17 23 pin19,20 0 . 6 0 0 . 4 5 17.00 ?0 .2 0 29.00 ?0 .2 0 13 .34 ?0.30 13. 34 ?0.30 12.23 ?0. 3 0 13.1 3 ?0 .3 0 12.00 ?0 .2 0 0. 60 ?0.10 16x 15x1 .778 =2 6.67 ?0. 30 seating plan e gag e p l ane max 3.50 0.3 0 0.05 2 ~ 8 ? (2.50) 1.50 ?0.20 ( r 0 . 4 0 ) 3.9 0 ?0 . 30 2x 1.95 ?0.30 2.4 8 ?0 .3 0 3.90 ?0.30 4x 0.6 0 ?0 .1 0 5x 0.50 ?0 .1 0 2x 0.5 08 19 3.15 ?0.2 0 fsb50450b / fsb5 0450bs motion spm ? 5 series semiconductor components industries, llc, 2017 www.fairchildsemi.com fsb50450b / fsb50450bs . rev. 1.2 www.onsemi.com 11 on semiconductor and the on semiconductor logo are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries in the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth er intellectual property. a listing of on semiconductor's product/patent coverage may be accessed at www. onsemi.com/site/pdf/patent-marking.pdf. on semiconductor reserve s the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitabilit y of its products for any particular purpose, nor does on semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically di sclaims any and all liability, including without limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor pro ducts, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. "typical" parameters which may be provided in on semiconductor data sheets and/or specifications can and do v ary in different applications and actual performance may vary over time. all operating parameters, including "typicals" must be validated for each customer application by customer's technical experts. on semiconductor does not convey any license under its patent rights nor the rights of others. on semiconductor products are not d esigned, intended, or authorized for use as a critical component in life support systems or any fda class 3 medi cal devices or medical devices with a same or similar classif ication in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against al l claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such uni ntended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/a ffirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publ ic ati on ord erin g inf orma tion lit e rat ure fulf il lm e nt : l iterat ure di st ribut ion cen ter f or o n semico nduct or 1 9521 e. 32nd pkwy, aurora, colorado 80011 usa p h one : 3 03-67 5-2175 or 800-344-3860 toll free usa/ canada f ax: 303-675-2176 or 800-344-3867 tol l f re e usa/ canada email : orderli t@onsemi .com n. ameri can tech ni cal supp ort : 800-282-9855 toll f ree usa/canada. euro pe, midd le east an d afr ica tech ni cal su ppo rt : phone: 421 33 7 90 2910 jap an customer fo cus center pho ne: 81-3-5817-1050 on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit f or ad dit io nal i nf ormat io n, ple ase con ta ct you r l ocal sa les re prese nt at ive ? www. onsemi.com 1 on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent ? marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 www.onsemi.com literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative ? semiconductor components industries, llc |
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